格子应变诱导的d频段中心工程使得假电容能量存储在2D低超电子V-NiCo2O4中用于不对称的超级电容器
Soumyajit Maitra1, Krishnendu Roy1, Dibyendu Ghosh1
1School of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032, India. praveen.kumar@iacs.res.in.
Nanoscale
|November 7, 2023
概括
通过对NiCo2O4进行化的应变工程显著提高了超级电容器的性能. 这种方法提高了能量密度和功率密度,为先进的电化学能量存储设备提供了一个有前途的战略.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 纳米技术纳米技术
背景情况:
- 高性能电化学储能装置需要了解材料结构依赖的电荷储存机制.
- 应变工程是优化能源存储应用中的材料性能的一个关键策略.
研究的目的:
- 通过对NiCo2O4进行 (V) 兴奋剂来研究应变工程的作用,以提高超级电容器性能.
- 阐明电子结构的变化及其对电荷存储机制的影响.
- 建立格子应变,d频段中心和伪容量储能之间的联系.
主要方法:
- 无粘合剂的V-化NiCo2O4.4的一步热水合成.
- 制造和测试水性不对称混合超级电容器在三电极和袋式电池配置.
- 密度函数理论 (DFT) 计算分析格子应变,电荷传输和电子结构.
主要成果:
- 3 mol% V 兴奋剂增加了 96% 的特定电容 (到 2316 F g-1 在 1 A g-1 上) 和 24% 的速率容量.
- 在袋式电池中使用V-doped NiCo2O4的特定电容量增加了两倍,能量密度高出41%,能量密度高出96.3 W h g-1),功率密度高出24.3% (8733.6 W g-1).
- 在6000个循环后实现了优异的循环稳定性,容量保持率为95.4%.
结论:
- 在NiCo2O4中,兴奋剂诱导的晶格收缩有效地提高了超级电容器中的能量和功率密度.
- 这项研究揭示了格子应变和d频段中心调制在伪容量储能中的关键作用.
- 这项工作为设计高性能储能材料提供了新的视角,通过基本的结构和电子属性理解.
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