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Updated: Jul 11, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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在误导的ScAlMgO4基板上对N极InGaN生长的研究

Mohammed A Najmi1, Pavel Kirilenko1, Daisuke Iida1

  • 1Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), 23955-6900, Thuwal, Saudi Arabia.

Scientific reports
|November 7, 2023
PubMed
概括

我们在误导的氧化 (SAM) 基板上种植了N极的氧化 (InGaN). 较小的基板误导角度改善了InGaN的晶体质量,取得了前所未有的结果.

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SN2 Reaction: Stereochemistry02:23

SN2 Reaction: Stereochemistry

In an SN2 reaction, the nucleophilic attack on the substrate and departure of the leaving group occurs simultaneously through a transition state. As the nucleophile approaches the substrate from the back-side, the configuration of the substrate carbon changes from tetrahedral to trigonal bipyramidal and then back to tetrahedral, leading to an inversion in the configuration of the product.
If the substrate is an achiral molecule at the α-carbon, the inversion of configuration is not...
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