相关实验视频

Updated: Jul 3, 2026

Atomically Traceable Nanostructure Fabrication
12:35

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

8.8K

在Cl-Si上的缺陷介导的原子层蚀刻过程:一个原子的洞察力

Peizhi Wang1, Fengzhou Fang1,2

  • 1Centre of Micro/Nano Manufacturing Technology (MNMT-Dublin), University College Dublin, Dublin D4, Ireland.

The journal of physical chemistry. C, Nanomaterials and interfaces
|November 8, 2023
PubMed
概括

点缺陷通过降低吸附能量和激光值,显著提高了激光诱导的原子层蚀刻 (ALE). 这种缺陷介导的机制使得高效,无损的Cl-Si的层次蚀刻成为可能.

更多相关视频

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.9K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K

相关概念视频

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...