一个可调节的宽带太赫兹MoS2吸收器,采用串行并行混合网络设计
Fei Cai1,2, Zhifei Kou1, Guangsheng Deng1,2
1Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electric Technology, Hefei University of Technology, Hefei 230009, China. dgsh@hfut.edu.cn.
Physical chemistry chemical physics : PCCP
|November 8, 2023
概括
使用二硫化 (MoS2) 的新型单层太赫兹吸收器通过串行并行混合网络展示了出色的宽带吸收 (0.842.34 THz). 这种可调节的设备提供可调节的吸收和广角,极化不敏感的性能,用于先进的应用.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 电磁学 电磁学 电磁学 电磁学
背景情况:
- 宽带吸收器对于诸如雷达隐形和太赫兹成像等应用至关重要.
- 现有的多层吸收器往往复杂且难以制造.
- 具有宽带特性的可调和单层吸收器是非常可取的.
研究的目的:
- 提出一种设计可调节的单层宽带吸收器的新方法.
- 通过使用频率选择性表面图案和串行并行混合网络来提高吸收器性能.
- 为了研究拟议的吸收器的可调性和角度/极化依赖性.
主要方法:
- 使用串行并行混合网络的宽带吸收器的设计.
- 集成频率选择性表面图案以提高性能.
- 使用单层二硫化物 (MoS2) 材料.
- 分析吸收,带宽,通过偏向电压的可调性,以及角度/极化特征.
主要成果:
- 实现了超过90%的宽带吸收率,从0.84到2.34 THz (相对吸收带宽为94.3%).
- 使用应用偏向电压,可调节的吸收率从90%降至10%.
- 在60° (TM) 和50° (TE) 冲击角内确认极化不敏感.
- 展示了MoS2层类型和表面波动对吸收器性能的影响.
结论:
- 拟议的串行并行混合网络使单层MoS2吸收器具有出色的宽带特性.
- 可调的性质和简化的结构显著扩大了单层吸收器的适用性.
- 这种设计为特拉赫兹应用的复杂多层吸收器提供了有竞争力的替代方案.
相关概念视频
MOSFET Amplifiers
165
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
165
Design Example: Capacitance Multiplier Circuit
791
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
791
MOSFET: Enhancement Mode
349
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
349
Small-Signal Analysis of MOSFET Amplifiers
572
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
572
Design Example
332
The innovation of touch-tone telephony revolutionized the telecommunications industry by replacing the traditional rotary dial with a dual-tone multi-frequency (DTMF) signaling system. This system uses a matrix-style keypad with buttons arranged in four rows and three columns, creating 12 distinct signals each assigned to a pair of frequencies. Each button press results in a simultaneous generation of two sinusoidal tones – one from a low-frequency group (697 to 941 Hz) and one from a...
332
MOS Capacitor
808
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
808


