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在基于二硫化的薄膜晶体管中模拟生物启发的突触行为

Yufei Wang^1,2, Qi Yuan^1,2, Xinru Meng^1,2

¹School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

The Journal of chemical physics

|November 8, 2023

概括

硫化 (MoS2) 薄膜晶体管表现出突触行为,模拟刺激后突触电流,并显示短期和长期的强化和抑郁. 这些发现突显了MoS2的存在.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
神经科学是一个神经科学.

背景情况:

突触可塑性对于生物系统中的学习和记忆至关重要.
在人工设备中模仿突触行为为神经形态计算提供了途径.
二硫化物 (MoS2) 是用于电子应用的有希望的二维材料.

研究的目的:

模拟使用MoS2作为活性层的晶体管中的突触行为.
研究基于MoS2的薄膜晶体管在神经形态计算应用中的潜力.
分析MoS2设备中的短期和长期可塑性现象.

主要方法:

用MoS2作为活性层制造双极薄膜晶体管.
模拟刺激后突触电流 (EPSC) 现象.
应用连续的电压脉冲 (±5V) 来诱导电位和压力.
使用三角波脉冲对脉冲促进的评估.

主要成果:

观察到模拟EPSC的逐渐电压衰减,反应电流略有增加.
经过十次连续的脉测试,证明了短期的强化和抑郁.
在92个正脉冲 (长期增强) 后,实现了显著的电流过渡 (0.14mA到28.3mA).
在88个负脉冲后观察到电流变化,表明长期抑郁.
展示了配对脉冲促进,第二个刺激脉冲电流是第一个脉冲电流的1.2倍.

结论:

基于MoS2的薄膜晶体管有效模拟突触行为,包括EPSC,强化和抑郁.
观察到的可塑性现象表明MoS2是开发人工突触器件的可行材料.
MoS2为未来的神经形态计算硬件提供了显著的优势和前景.

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