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协同调节高性能无矿太阳能电池的接口缺陷和载体动态

Bo Yu¹, Yapeng Sun¹, Jiankai Zhang²

¹School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong, 510640, China.

Small (Weinheim an der Bergstrasse, Germany)

|November 9, 2023

概括

接口缺陷限制了基于锡的矿太阳能电池 (Sn-PVSCs). 一种新的两极半导体,O-pivaloylhydroxylammonium trifluoromethanesulfonate (PHAAT),可以使缺陷无效,提高Sn-PVSC的效率和稳定性.

科学领域:

材料科学材料科学材料科学
可再生能源是可再生能源的来源.
半导体物理半导体物理

背景情况:

锡基矿太阳能电池 (Sn-PVSCs) 由于高密度接口缺陷导致非辐射重组和电压损失,因此受到效率限制.
这些缺陷阻碍了Sn-PVSC的性能和稳定性,限制了它们的商业可行性.

研究的目的:

开发一种新型的两极半导体,O-pivaloylhydroxylammonium trifluoromethanesulfonate (PHAAT),用于管理Sn-PVSC中的接口缺陷和载体动态.
为了提高效率,减少歇斯底里,并通过缺陷被动化和表面修改提高Sn-PVSC的运行稳定性.

主要方法:

在Sn-PVSC中合成和应用光半导体PHAAT作为接口调制器.
缺陷被动化机制的表征,包括阴离子和阴离子缺陷的协同被动化以及与Sn2+的协调.
研究电子结构的修改,导致p型到n型的过渡和后面表面场的形成.

主要成果:

PHAAT有效地使阳离子和阴离子缺陷无活性,补偿表面电荷,并减轻Sn2+氧化.
PHAAT中的硫酸盐离子通过使深层缺陷无源化来抑制非辐射重组,并提高了对表面氧化的能量屏障.
经PHAAT处理的Sn-PVSC实现了13.94%的冠军功率转换效率 (PCE),而歇斯底里则可以忽略不计.
经过修改的设备表现出了出色的稳定性,在储存2000小时后保留了94.7%的初始PCE,在连续照明1000小时后保留了91.6%.

结论:

PHAAT是Sn-PVSC的高效接口调制器,解决了缺陷被动化和载体动态的关键问题.
通过PHAAT的开发,可以构建矿表面的p-n同位点,加速电子提取并提高设备的性能.
这项工作提出了实现高效和稳定的基矿光伏设备的强大战略,为其实际应用铺平了道路.

关键词:

深层陷状态表示深层陷状态.接口运营商管理接口运营商管理没有的矿太阳能电池.非辐射复合损失的非辐射复合损失.

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