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相关概念视频

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

586
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
586
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
572

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相关实验视频

Updated: Jul 11, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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在GaN HEMT中用于移动提取的计算装配方法.

Kuan-Chang Chang1, Xibei Feng1, Huangbai Liu1

  • 1School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School Shenzhen 518055 China lilei@pkusz.edu.cn.

RSC advances
|November 9, 2023
PubMed
概括
此摘要是机器生成的。

这项研究引入了一种新的计算方法,以准确测量化 (GaN) 高电子移动性晶体管 (HEMT) 中的电子移动性. 该技术克服了传统方法的局限性,提供了一种更可靠的方法来确定设备性能.

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Scanning-probe Single-electron Capacitance Spectroscopy

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相关实验视频

Last Updated: Jul 11, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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科学领域:

  • 半导体物理 半导体物理
  • 材料科学 材料科学 材料科学
  • 电子工程 电子工程

背景情况:

  • 化 (GaN) 具有很高的电子流动性,因此对于先进的电子设备至关重要.
  • 传统的方法,如霍尔效应和传输长度方法,由于非门区电阻和高成本等因素,难以准确确定高电子移动性晶体管 (HEMT) 的移动性.

研究的目的:

  • 开发一种有效和准确的计算装配方法来提取GaN HEMT的载体移动性.
  • 解决现有技术在准确测量移动性和计算非门阻力方面的局限性.

主要方法:

  • 拟议的方法涉及测量源-排水阻力在一个狭窄的超驱动电压范围.
  • 它使用的假设是,传导和电容的总和在这个范围内保持不变.
  • 采用一个独特的功能,将总电阻与过驱电压相匹配,以提取移动性和非门电阻.

主要成果:

  • 计算装配方法成功地提取了载体移动性和非门阻力.
  • 这种新方法的可行性和可靠性已经过实验验证.

结论:

  • 这种新方法为确定GaN HEMT移动性提供了准确和有效的替代方法.
  • 它克服了古典技术的缺点,为设备表征提供了具有成本效益和精确的解决方案.