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有效的量子点发光二极管由厚厚的无机CdS界面修改层启用.

Chunyan Yang¹, Rui Ma¹, Zhe Wang^2,3

¹School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou 730000, China.

ACS applied materials & interfaces

|November 9, 2023

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厚厚的硫化 (CdS) 薄膜有效地阻止量子点发光二极管 (QLED) 中的激子火. 这种无机界面修改层提高了QLED的性能,实现了更高的效率和电流.

科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
纳米技术纳米技术

背景情况:

量子点发光二极管 (QLED) 中的超薄聚合物界面修饰层 (IML) 旨在改善电荷平衡并减少刺激灭.
当前的聚合物IML (∼10 nm) 不足以完全抑制界面激发火,因为它们的厚度小于能量传输距离,限制了设备的性能.

研究的目的:

为基于CdSe的QLED开发一种新的无机IML,可以完全阻止接口激发火.
为了提高QLED中的电荷平衡和整体设备性能.

主要方法:

使用35nm无机硫化物 (CdS) 薄膜作为界面修饰层 (IML) 制造基于CdSe量子点的QLED.
设备性能的表征,包括外部量子效率 (EQE) 和电流效率,比较带有和没有CdS IML的设备.

主要成果:

35纳米的CdS IML有效地改善了电荷平衡,因为它的电子流动性低,能量水平很好.
由于CdS IML的厚度超过了能量传输距离,因此完全抑制了界面激发火.
带有CdS IML的QLED显示最大EQE为21.2%,峰值电流效率为24.2cd A-1,比没有IML的设备显著改进.

结论:

关键词:

收费负债表的收费余额是如何计算的激发式火灭方式界面修改层是界面修改层.发光二极管是一种发光二极管.一个量子点,一个量子点.

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一种厚厚的无机CdS膜作为QLED的有效IML,完全阻断了界面刺激火.
开发的CdS IML策略显著提高了QLED性能,为开发高效设备提供了一条新的途径.