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通过微通道合成策略,用于高效和稳定的量子点发光二极管的酸

Ting Wang^1,2, Liming Xie², Fuyan Su¹

¹College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, China. xqmeng@zjnu.cn.

|November 10, 2023

概括

添加的氧化纳米晶体改善了量子点发光二极管 (QLED). 这种新型电子输送层提高了效率和设备寿命,克服了传统氧化的局限性.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
光电学是指光电子产品.

背景情况:

氧化 (ZnO) 纳米晶体 (NC) 是量子点发光二极管 (QLED) 中重要的电子传输层 (ETL).
ZnO NCs的局限性包括过度的电子流动性,表面缺陷和合成可重复性差,阻碍了QLED的性能.

研究的目的:

为高效和稳定的QLED开发 (IV) 合的ZnONCs作为改进的ETL.
调查锡剂对 ZnO NC 特性的影响及其在提高 QLED 性能方面的作用.

主要方法:

使用微通道 (MC) 反应堆进行控制生产,合成 (IV) 的 ZnO NCs (Zn_0.96Sn_0.04O).
描述NC属性,包括表面缺陷和电子传输.
红色QLED的制造和测试,使用Sn(IV) 合的ZnONC作为ETL.

主要成果:

Sn(IV) 兴奋剂降低了表面氧氧缺陷和改变了电子传输特性.
Zn_0.96Sn_0.04O ETL显著提高了红色QLED的外部量子效率 (EQE),从9.2%提高到15.5%.
设备寿命 (T70在1000cdm-2) 提高了1.77倍,达到78小时,而无毒ZnO的44小时相比.

结论:

用Sn(IV) 添加的ZnO NC为提高QLED效率和稳定性提供了一个有前途的替代ETL.
通过MC反应器进行受控合成,确保统一的尺寸分布和生产可重复性.

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