应变诱导的2H到1T'相变在悬浮的MoTe2中使用电气双层门
Shubham Sukumar Awate1, Ke Xu1,2,3, Jierui Liang1
1Department of Chemical and Petroleum Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States.
ACS nano
|November 10, 2023
概括
研究人员使用压力证明了在二硫化物 (MoTe2) 中的可逆,门控制的相位过渡. 这种2D材料的突破可以使低功耗电子设备和内存应用成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 二硫化物 (MoTe2) 呈现出不同的半导体 (2H) 和半金属 (1T') 阶段.
- 在MoTe2中,相过渡可以通过热,兴奋剂或应变来诱导,并有可能用于电子应用.
研究的目的:
- 为了证明一个门控制的,完全可逆的阶段过渡从2H到1T'阶段在几层悬浮的MoTe2.2.
- 探索使用应变作为2D材料相位过渡的刺激.
主要方法:
- 制造几层悬浮的MoTe2场效应晶体管.
- 通过使用固体聚合物电解质的电气双层门来施加应变.
- 同时进行电传输测量和拉曼光谱,以确认相位过渡.
主要成果:
- 在门电压 (VSG) ≥2.5V时,观察1T'阶段的特征A1g振动峰值.
- 在E2g声模式中检测到红移,表明应变诱导的声移 (0.2-0.3%应变).
- 在VSG≥2V时,电阻的温度系数从负变为正的转变,证实半导体到金属的转变.
结论:
- 介绍了一种用于悬浮2D材料中受门控制,可逆应变应变的新方法.
- 这种技术有助于探索基本的材料特性,并开发新的电子设备功能.
- 在MoTe2中展示的可逆相变具有低功耗内存和逻辑应用的前景.
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