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通过使用双形成过程实现的神经形态系统中改善的电阻和突触特征

Minkang Kim¹, Dongyeol Ju¹, Myounggon Kang²

¹Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

Nanomaterials (Basel, Switzerland)

|November 10, 2023

概括

这项研究比较了氧化 (ZrO_x) 电阻随机存储器 (RRAM) 设备的单一和双重形成方法,展示了双重形成方法.

科学领域:

材料科学与工程材料科学与工程
电气工程电气工程
计算机科学计算机科学

背景情况:

电阻随机存储器 (RRAM) 设备对于开发神经形态计算系统至关重要.
基于氧化 (ZrO_x) 的RRAM设备为突触应用提供了有前途的特性.
了解成型过程对于优化RRAM设备性能和可靠性至关重要.

研究的目的:

为了研究和比较ITO/ZrO_x/TaN RRAM设备的电气性能.
分析单一和双重成型工艺对设备特性的影响.
模拟突触功能并评估在深度神经网络中的表现,用于模式识别.

主要方法:

使用传输电子显微镜 (TEM),散射X射线光谱学 (DXS) 和X射线光电子光谱学 (XPS) 的设备表征.
对单形和双形方法的电阻切换行为,耐久性和保留性能的分析.
使用脉冲方案和基于赫比规则的尖峰时间依赖可塑性 (STDP) 仿真的突触模拟.

主要成果:

证实了TaON接口层的存在,影响设备行为.
与单个成型方法相比,双成型方法在耐力和保留方面表现出更高的均性.
成功模拟强化和抑郁,在基于深度神经网络的模式识别系统中实现高识别精度.

结论:

双成型过程更适合在神经形态应用中可靠的RRAM设备操作.
该研究为RRAM设备的光纤形成机制和能量带图提供了洞察力.
演示的突触可塑性仿真突出了这些RRAM设备对先进AI硬件的潜力.

关键词:

这是神经形态系统的神经形态系统.电阻开关电阻开关峰值时间依赖的可塑性突触模拟的突触模拟

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