辅助诊断信号用于深层探测.
Il-Ho Ahn1, Dong Jin Lee1, Deuk Young Kim1,2
1Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|November 10, 2023
概括
施托基二极管中的温度依赖曲线适配错误提供了一个新的诊断工具. 这种方法提高了像拉普拉斯变换-DLTS和同热电容瞬态光谱等深层次瞬态光谱 (DLTS) 技术的准确性和效率.
科学领域:
- 半导体物理 半导体物理
- 材料科学是一种材料科学.
- 电气工程 电气工程 电气工程
背景情况:
- 电容深层瞬态光谱 (CDLTS) 是一种用于描述半导体缺陷的标准技术.
- 在DLTS中重叠的信号可能会使准确的缺陷分析复杂化.
- 现有的方法需要广泛的温度扫描,影响效率.
研究的目的:
- 引入温度依赖的曲线拟合错误作为DLTS的辅助诊断信号.
- 为了证明拉普拉斯变换-DLTS (LT-DLTS) 和同热电容暂时光谱 (ICTS) 使用这种新信号的时间效率和精度提升.
- 为了验证 Be-doped GaAs 与重叠 DLTS 信号的方法.
主要方法:
- 使用来自Schottky二极管前方I-V曲线的温度依赖曲线拟合误差值.
- 应用拉普拉斯变换-DLTS (LT-DLTS) 和同热电容暂时光谱 (ICTS) 方法.
- 将结果与传统的电容 DLTS (CDLTS) 和富里埃变换 DLTS (FTDLTS) 在广泛的温度范围内进行比较.
主要成果:
- 曲线拟合错误有效地作为辅助诊断信号,与CDLTS相关联.
- 在Tpeak附近的特定温度范围内的LT-DLTS和ICTS分析显示与全范围CDLTS和FTDLTS有很好的一致性.
- 在Tpeak周围观察到强烈的LT-DLTS信号,ICTS结果证实了这一点.
- 曲线拟合错误信号的起源与Tpeak附近的深层陷热辐射增加的不适合错误有关.
结论:
- 取决于温度的曲线拟合错误为DLTS提供了有价值的,时间效率高的辅助诊断.
- 拟议的方法提高了LT-DLTS和ICTS等技术的准确性,特别是在复杂的频谱中.
- 这种方法为半导体缺陷表征提供了更有效的替代方案.
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