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基于CuInP₂S₆和InZnO的低热预算铁电场效应晶体管

Hojoon Ryu¹, Junzhe Kang¹, Minseong Park²

¹Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.

ACS applied materials & interfaces

|November 10, 2023

概括

我们使用2D CuInP2S6 (CIPS) 和InZnO (IZO) 开发了新的铁电场效应晶体管 (FeFET). 这些CIPS/IZO FeFET显示出对节能的人工神经网络和先进的CMOS+X应用的前景.

科学领域:

材料科学材料科学材料科学
电子工程电子工程
纳米技术纳米技术

背景情况:

铁电场效应晶体管 (FeFET) 对非易失性记忆和神经形态计算至关重要.
开发与互补金属氧化物半导体 (CMOS) 技术兼容的低热预算FeFET对于先进的集成电路至关重要.

研究的目的:

展示使用二维铁电CuInP2S6 (CIPS) 和氧化物半导体InZnO (IZO) 的新型FeFET.
调查CIPS/IZO FeFET作为神经网络应用中的人工突触装置的性能.
评估这些FeFET在CMOS上垂直堆叠的可行性,以实现节能3D神经网络.

主要方法:

制造用于FeFETs的CIPS/IZO异构结构.
电气性能的表征,包括内存窗口,非状态电流和载体移动性.
评估CIPS/IZO FeFETs作为人工突触,评估动态范围和多层状态稳定性.
使用CIPS/IZO FeFET用于手写数字识别 (MNIST) 的神经网络的实施.

主要成果:

CIPS/IZO FeFET 实现了大约 1 V 的非挥发性内存窗口,具有较低的非状态电流和高载波流动性.
在CIPS层有效地兴奋和被动化了IZO道.
CIPS/IZO突触器件表现出125的动态比率和稳定的多层状态.
神经网络在MNIST手写数字识别中表现出超过80%的准确性.

结论:

低热预算CIPS/IZO FeFET为非易失性记忆和人工突触提供了有希望的性能.
CIPS层的双重功能提高了设备的性能.
与CMOS的垂直集成是可行的,为节能3D神经形态计算和CMOS+X技术铺平了道路.

关键词:

2D铁电制品 2D铁电制品在CuInP2S6S6中使用.在InZnOO中,我们知道.铁电晶体管是一种铁电晶体管.神经网络的神经网络的神经网络有氧化物半导体半导体

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