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Updated: Jul 11, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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时间域观察MoSe2/WSe2异构结构中介层激子形成和热化

Veronica R Policht1,2, Henry Mittenzwey3, Oleg Dogadov4

  • 1Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, 20133, Italy. vpolicht@umich.edu.

Nature communications
|November 10, 2023
PubMed
概括

过渡金属二甲基 (TMD) 异构结构中的介层激子形成的速度比电荷转移慢,需要~1 psi. 这种延迟解释了TMD光电子中的光电流生成.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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