相关实验视频

Updated: Jul 26, 2026

Direct Imaging of Laser-driven Ultrafast Molecular Rotation
10:52

Direct Imaging of Laser-driven Ultrafast Molecular Rotation

Published on: February 4, 2017

9.7K

在极化多重复合光纤激光器中,双生成的单射动态

Alberto Rodriguez Cuevas1, Igor Kudelin2,3, Hani Kbashi4

  • 1College of Engineering and Physical Sciences, Aston Institute of Photonic Technologies, Aston University, Birmingham, B4 7ET, UK. arc28@alumnos.unican.es.

Scientific reports
|November 11, 2023
PubMed
概括

研究人员研究了在单个激光腔中生成的双光学频率. 他们发现,最初短暂脉冲的能量决定了双状态的成功生成,为改进控制提供了洞察力.

更多相关视频

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference00:07

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

8.5K
Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy08:48

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

7.6K

相关概念视频

Super-resolution Fluorescence Microscopy01:37

Super-resolution Fluorescence Microscopy

Super-resolution fluorescence microscopy (SRFM) provides a better resolution than conventional fluorescence microscopy by reducing the point spread function (PSF). PSF is the light intensity distribution from a point that causes it to appear blurred. Due to PSF, each fluorescing point appears bigger than its actual size, and it is the PSF interference of nearby fluorophores that causes the blurred image. Various approaches to achieving higher resolution through SRFM have recently been developed.
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...