在具有拓缺陷阵列的液晶薄片中,内马特-同otropic 阶段过渡
Hao Chen1, Miao Jiang1, Yubing Guo2
1Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen 518055, China. jiangm@sustech.edu.cn.
Soft matter
|November 13, 2023
概括
加热速率和缺陷类型影响液晶中从阴性到异性转变的相位. 同otropic域从缺陷核心或基于这些因素的随机位置出现,影响过渡动力学.
科学领域:
- 材料科学 材料科学 材料科学
- 软物质物理学 软物质物理学
背景情况:
- 阴性液晶呈现相位过渡到同otropic状态.
- 液晶中的拓缺陷可以影响材料特性和过渡.
研究的目的:
- 为了研究加热速率和拓缺陷数组对尼马特转异型相位过渡动力学的影响.
- 了解缺陷强度和排列如何影响同otropic域的出现和生长.
主要方法:
- 研究带有光模式导体场的阴性液晶薄片.
- 使用恒定的加热速率来观察相位过渡.
- 分析与缺陷核心相关的同otropic域的出现和运动.
主要成果:
- 同otropic域的出现取决于加热速率和缺陷类型 (±1/2与±1缺陷).
- 同otropic域从高加热率 (±1/2缺陷) 或总是 (±1缺陷) 的缺陷核心中出现.
- 域移动和增长遵循一个功率定律,指数受缺陷固定在低加热速率的影响.
结论:
- 加热速率和缺陷拓学显著控制了尼马特-同位素转变动力学.
- 表面张力和大量自由能量之间的相互作用决定了域行为和增长动态.
- 缺陷核作为同otropic域的核化场所,特别是在特定的加热条件下.
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