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Updated: Aug 2, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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用扫描纳米衍射分析对-WSe2Moiré异构结构的应变和缺陷的分析

Bengisu Sari1,2,3, Steven E Zeltmann1, Chunsong Zhao1,3,4

  • 1Department of Materials Science and Engineering, University of California Berkeley, Berkeley, California 94720, United States.

ACS nano
|November 13, 2023
PubMed
概括

在WSe2上生长的超薄 (Te) 形成了一个moiré超级网格. 研究人员精确地绘制了结构和应变,揭示了在这个二维材料系统中首选的生长方向和不合适的位移.

关键词:
这就是WSe2Se2的意思.缺陷 缺陷 缺陷 缺陷 缺陷莫雷超级格子 莫雷超级格子扫描纳米衍射的扫描.压力 压力 压力 压力电是电中的一种.

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Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...