在RF喷射的基于InGaZnO的memristor中,均的多层切换和突触性质被氧气等离子体处理
Chandreswar Mahata1, Hyojin So1, Seyeong Yang1
1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
The Journal of chemical physics
|November 14, 2023
概括
这项研究通过控制氧气空位,证明了氧化/氧化/氧化设备的稳定多层记忆. 该设备模仿生物突触,显示了低能耗人工智能硬件的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 固态电子 固态电子
- 神经科学是一个神经科学.
背景情况:
- 电阻开关设备为先进的记忆和神经形态计算提供了潜力.
- 控制氧气空缺对于稳定的多层次记忆状态至关重要.
- 在人工系统中模仿突触可塑性是大脑启发的计算的关键目标.
研究的目的:
- 为了研究 ITO/InGaZnO/ITO 设备中的双极渐进电阻切换.
- 为了实现稳定的多层记忆状态,控制氧气空隙形成.
- 使用基于InGaZnO的memristor来模拟生物突触功能.
主要方法:
- 制造印锡氧化物/印氧化物/印锡氧化物 (ITO/InGaZnO/ITO) 设备.
- 在InGaZnO切换层内控制形成内在氧气空缺.
- 电压应力和电脉冲序列的应用,以诱导电阻切换和突触行为.
主要成果:
- 稳定的多级别内存状态通过控制的 RESET 电压和不可降解的数据耐用性来实现.
- ITO/InGaZnO接口被确定为氧离子迁移和氧化还原反应的关键.
- 该设备成功模拟了短期和长期的强化和抑郁,模拟了突触学习.
- 观察到尖端振幅和尖端速度依赖的可塑性,证明了低能耗.
结论:
- 在 ITO/InGaZnO/ITO 设备中,控制氧空位工程可实现稳定的多层电阻切换.
- 基于InGaZnO的memristor有效模拟生物突触功能,包括突触可塑性.
- 这些发现突显了ITO/InGaZnO/ITO记忆器在开发节能的人工突触和大规模神经形态系统方面的潜力.
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