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Updated: Jul 11, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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通过在固体溶液中进行带间距调整来增强电阻记忆窗口 (Cr1-V) O3

Michael Rodriguez-Fano1, Mohamad Haydoura1, Julien Tranchant1

  • 1Institut des Matériaux Jean Rouxel, IMN, Université de Nantes, CNRS, F-44000 Nantes, France.

ACS applied materials & interfaces
|November 14, 2023
PubMed
概括

这项研究探讨了V替代的Cr2O3用于高级非易失性记忆. 在 (Cr1-xVx) 2O3 固体溶液中调整 V 含量显著提高了内存窗口性能,证实了相关绝缘体内存应用的潜力.

关键词:
具有V替代的Cr2O3被替换为Cr2O3.乐队间隙 乐队间隙 乐队间隙不易挥发的记忆力 不易挥发的记忆力电阻开关 电阻开关一个固体溶液固体溶液.

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Band Theory02:35

Band Theory

When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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