:

Yao Guo1, Liuru Fang1,2, Qiang Li3

  • 1School of Materials Science and Engineering, Anyang Institute of Technology, Anyang 455000, China. guoyao@ayit.edu.cn.

概括

矿材料如MAPbI3和MAPbCl3与氧化 (Ga2O3) 的接口工程提高了设备的性能. PbI/O接口显示强大的粘合和显著的电荷转移,对光电子有希望.