具有过渡金属离子的金属有机框架的电子结构和d-d频谱
Ilya Popov1, Dmitrii Raenko2, Andrei Tchougréeff2
1School of Chemistry, University of Nottingham, University Park, Nottingham NG7 2RD, U.K.
The journal of physical chemistry. C, Nanomaterials and interfaces
|November 16, 2023
概括
我们提出了一种新的计算方法,以准确描述过渡金属 (TM) 金属有机框架 (MOF) 的电子结构. 这种方法有助于理解它们的磁性和传感性质,包括旋转交叉.
科学领域:
- 计算化学的计算化学
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
背景情况:
- 在金属有机框架 (MOF) 中准确描述过渡金属 (TM) 离子的电子结构是一个重大的计算挑战.
- 在开放的d中低能量的激发对于MOF的磁性和传感性质至关重要,例如旋转交叉.
研究的目的:
- 引入和验证一种新的计算方法来研究TM-MOF中的d-d电子激发.
- 提供低能激发的定量描述,使人们能够更好地了解MOF属性.
主要方法:
- 开发了一种有效的晶体场哈密尔顿式方法,一种混合QM/QM方法.
- 将晶体结构分为d-和s,p子系统,在不同的理论层面进行处理.
- 在模型框架,碳二胺,二胺和M-MOF-74 (M = Fe,Co,Ni) 上测试了该方法.
主要成果:
- 该方法成功计算了TM-MOFs的d-d频谱.
- 对于M-MOF-74系列的计算预测显示出与实验磁性属性的良好一致.
- 莫斯巴乌尔光谱数据也与计算预测很好地一致.
结论:
- 结晶场的有效哈密尔顿式方法是研究TM-MOF的可行方法.
- 这种方法提供了准确的低能激发的定量描述,对于MOF应用至关重要.
- 它为了解和预测MOF中的磁性和传感行为提供了一条途径.
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