在SrLaGaO4矩阵中的基于Dy的单离子磁铁:扩展晶格中的增强参数
Alexander V Vasiliev1, Timur Z Sharifullin1, Elena D Demidova1
1Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia. kazin@inorg.chem.msu.ru.
Dalton transactions (Cambridge, England : 2003)
|November 16, 2023
概括
用杂物合的SrLaGaO4显示出由于两个激发的克莱默斯双胞胎而导致的缓慢磁放松. 这种材料在重磁化过程中具有较高的能量屏障,超过了类似的化合物.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 磁力学 磁力学 是一种
背景情况:
- 单分子磁铁 (SMM) 对于先进的磁性存储和量子计算至关重要.
- 了解晶体结构和磁性之间的关系是设计高效的SMM的关键.
研究的目的:
- 为了研究Dy3+注射的SrLaGaO4.4的磁放松动态.
- 确定控制磁化放松过程的能量障碍.
- 为了比较磁性与类似材料的磁性.
主要方法:
- 测量磁感应度的测量.
- 磁化放松研究.
- 分析晶体场效应和克莱默斯双子.
主要成果:
- 用 Dy3+ 杂的 SrLaGaO4 呈现出异常缓慢的磁化放松.
- 两个不同的兴奋的克莱默斯双胞胎被认为是缓慢放松的原因.
- 确定了223cm-1的显著的第二次再磁化能量屏障.
- 这种能量屏障明显高于类似的Ca ((Y,Dy) AlO4化合物.
结论:
- SrLaGaO4为dysprosium离子提供了有效的宿主,导致增强的慢磁放松.
- 鉴定到的能量屏障表明了高密度数据存储应用的潜力.
- 结构因素,尽管扩大的Dy3+协调球,有助于观察到优越的磁性.
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