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在高温下,氧气空位丰富的LaAlO₃/SrTiO₃异质接口的电传输行为

Dianbing Luo¹, Yunhai Chen¹, Yifei Wang¹

¹Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China.

Journal of physics. Condensed matter : an Institute of Physics journal

|November 16, 2023

概括

在LaAlO3/SrTiO3异质连接处的氧气空隙驱动金属绝缘体过渡. 高温诱导漂移,而冷却导致跳跃导电和绝缘,通过暴露在空气中可逆.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
表面科学是一门学科.

背景情况:

在LaAlO3/SrTiO3 (LAO/STO) 接口的二维电子气体 (2DEG) 中,氧气空隙至关重要.
这些职位空缺显著影响LAO/STO异质连接的电特性.

研究的目的:

在高温和高真空条件下研究LAO/STO接口的电传输行为.
了解氧气空缺在LAO/STO异质连接的金属绝缘体过渡中的作用.

主要方法:

脉冲激光沉积被用来在STO基板上生长LAO薄膜.
在不同温度和真空水平下对电传输特性进行系统研究.

主要成果:

富含氧气空隙的LAO/STO异质连接在高温和真空中表现出金属绝缘体过渡.
导电机制在冷却时从漂移模式 (0.87 eV激活能量) 转换为跳转导电 (0.014 eV激活能量).
通过暴露在空气中,可以恢复绝缘状态,显示阻力下降.

结论:

氧气空隙度对LAO/STO异质连接的电导率和相变具有关键影响.
温度和真空在调节导电机制方面发挥着关键作用.
通过氧气空缺的接口工程提供了控制电子属性的途径.

关键词:

混乱程度程度的混乱程度金属绝缘过渡过渡氧气空缺的地方.这是一个二维的电子气体.

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