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在GaN/AlGaN超格子中对孔运输的建模研究

Mengxun Bai¹, Judy Rorison²

¹Department of Electrical and Electronic Engineering, University of Bristol, Bristol, BS8 1UB, UK. mb18200@bristol.ac.uk.

Scientific reports

|November 17, 2023

概括

在GaN/AlGaN超格子中,由于电离杂质的散射,孔运输很差. 优化迷你带位置和波函数重叠可以改善这些p-doped设备中的孔传输.

科学领域:

半导体物理半导体物理
材料科学材料科学材料科学
量子工程是量子工程的组成部分.

背景情况:

在p-doped wurtzite GaN和AlGaN中孔运输不良,妨碍了设备的性能.
建议GaN/AlGaN超级格子来改善孔运输,但实验结果显示存在局限性.

研究的目的:

研究GaN/AlGaN超格子中孔运输的理论建模.
检查屏障组成和层厚度对重孔迷你带特性的影响.
识别和最大限度地减少散射机制,特别是电离杂质的散射,以提高孔的移动性.

主要方法:

在石GaN/AlGaN超格子中孔运输的理论建模.
重孔迷你带有效质量和散射机制的分析.
在屏障区域的电离受体中对电离杂质 (II) 散射的研究.

主要成果:

AlGaN屏障的组成和GaN量子井/AlGaN屏障的厚度会影响重孔迷你带的位置和宽度.
电离杂质 (II) 散射被确定为降低孔运输的主要机制.
与电离杂质相对微波段能量位置和波函数与接受器重叠是关键因素.

结论:

优化微波段的能量位置,并尽量减少波函数与电离受体的重叠,可以减少II散射.
拟议的设计旨在通过减轻II散射来增强p-doped GaN/AlGaN超级格子中的孔传输.

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