宽温度范围热电 n型Mg3(Sb,Bi)2,具有高的平均值和峰值 zT 值
Jing-Wei Li1, Zhijia Han2, Jincheng Yu1
1State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Nature communications
|November 17, 2023
概括
这项研究通过添加金属内含物来增强抗蒙化物-双化物 (Mg3(Sb,Bi) 2) 热电材料. 这提高了电子冷却应用的性能,在广泛的温度范围内实现了高效率.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术 纳米技术
背景情况:
- 抗蒙化物-双化物 (Mg3(Sb,Bi) 2) 是用于电子冷却的关键热电材料.
- 优化其低温性能仍然是实际应用的挑战.
研究的目的:
- 为了提高Mg3的热电性能,在一个广泛的温度范围内.
- 为了研究将金属含量 (Nb或Ta) 纳入材料性能的影响.
主要方法:
- 将金属含量 (Nb或Ta) 纳入Mg3(Sb,Bi) 2矩阵中.
- 热电性质的表征,包括电导率,西贝克系数和热导率.
- 对界面障碍和载体运输机制的分析.
主要成果:
- 在室温zT (功绩数字) 中实现了超过200%的增强.
- 显著提高电导率 (300-450 K) 和功率系数 (>30 μW cm−2 K−2).
- 在798K时记录了2.04的最大zT,平均zT>1.5,导致15%的转换效率.
结论:
- 纳米复合材料策略有效地提高了n型Mg3 ((Sb,Bi) 2.的广泛温度范围的热电性能.
- 减少接口障碍是改善载体运输和整体效率的关键.
- 增强的材料显示了实际电子冷却应用的巨大潜力.
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