相关实验视频

Updated: Jul 11, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.7K

来自二维MoTe2的高性能互补电路

Jun Cai1,2, Zheng Sun1,2, Peng Wu3,4

  • 1Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States.

Nano letters
|November 17, 2023
PubMed
概括

这项研究表明,原始的二甲 (MoTe2) 场效应晶体管 (FET) 是n型. 一种新的氧化兴奋剂方法使p型MoTe2 FETs成为可能,为基于二维材料的互补电路铺平了道路.

关键词:
这是一个CMOS系统.这就是MoTe2Te2的原因.斯科特基屏障是一个障碍.这是一款高性能的高性能电脑.变频器 变频器 变频器 变频器氧化的兴奋剂是氧化.两个维的材料是二维材料.

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