门可调节的果曲率双极极化能力在迪拉克半金属Cd_{3}As_{2}中
Tong-Yang Zhao1, An-Qi Wang1, Xing-Guo Ye1
1State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China and Hefei National Laboratory, Hefei 230088, China.
Physical review letters
|November 17, 2023
概括
我们在迪拉克半金属化纳米板中发现了门调节的贝里曲率二极极分极性. 这种非线性量子传输效应,由门电压调节,显示出对拓电子学的希望.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子运输是一种量子运输.
背景情况:
- 迪拉克半金属由于相对论的电荷载体而表现出独特的电子特性.
- 非线性霍尔效应提供了关于贝里曲率分布及其对电子动态的影响的见解.
研究的目的:
- 为了研究化 (Cd3As2) 纳米板中的可调节门的贝里曲率二极极极化性.
- 探索第三阶非线性霍尔效应及其通过电场和门场的调制.
主要方法:
- 在Cd3As2纳米板中测量了第三阶非线性霍尔效应.
- 应用电场来诱导贝里曲率双极.
- 使用门电压对效应进行调制.
- 缩放关系分析以研究费米水平依赖性.
主要成果:
- 对一个可调整的第三阶非线性霍尔效应的观察.
- 确定了霍尔电压和纵向电场之间的立方关系.
- 发现贝里曲率二极极分化的标志随着费米水平调整在狄拉克点上发生变化.
结论:
- 在迪拉克半金属中证明了对非线性量子传输的门控制.
- 这些发现突显了Cd3As2在拓电子学中的应用潜力.
- 这项研究为通过外部门场操纵贝里曲率效应提供了一条途径.
相关概念视频
Potential Due to a Polarized Object
416
A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
416
π Electron Effects on Chemical Shift: Aromatic and Antiaromatic Compounds
1.2K
In aromatic compounds, such as benzene, the circulation of (4n + 2) π-electrons sets up a diamagnetic or diatropic ring current around the perimeter of the molecule. This current induces a magnetic field that opposes the external field inside the ring and reinforces it on the outside. The protons in benzene are deshielded and exhibit high chemical shifts in the range 6.5–8.5 ppm. The shielding effect at the center of the ring is evident in complex aromatic molecules, such as...
1.2K
Biasing of Metal-Semiconductor Junctions
260
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
260
Metal-Semiconductor Junctions
353
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
353
Crystal Field Theory - Tetrahedral and Square Planar Complexes
42.7K
Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
42.7K
Fermi Level Dynamics
257
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
257


