使用双轴应变,外部电场和层间合的Hf2CO2/MoS2异构结构中的带对齐类型I,II转换:第一个主要调查
Ekaterina V Sukhanova1, Zakhar I Popov1
1Emanuel Institute of Biochemical Physics RAS, 119334, 4 Kosigin st., Moscow, Russia. yekaterina.sukhanova@phystech.edu.
Physical chemistry chemical physics : PCCP
|November 20, 2023
概括
研究人员为神经形态设备探索了Hf2CO2 / MoS2异构结构. 外部电场和侧向应变显著改变异质连接类型,使先进的纳米设备具有可调节的电子特性.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 神经形态计算需要具有可调节电子切换功能的先进材料.
- 异构结构为新型电子和光电子设备提供了有前途的平台.
研究的目的:
- 在各种外部刺激下研究Hf2CO2/MoS2异构结构的电子特性.
- 确定双轴应变,层间合和电场对异极连接类型的影响.
- 探索这些异构结构在神经形态和光电子应用中的潜力.
主要方法:
- 基于密度函数理论 (DFT) 的第一原则计算.
- 对Hf2CO2/MoS2异构结构进行模拟,这些异构结构受到双轴应变,层间合和电场的影响.
主要成果:
- 侧面变形 (拉伸和压缩) 显著改变了异质连接类型,从I型到II型.
- 外部电场也会影响异质连接的类型.
- 与侧向应变和电场相比,垂直压力的影响不那么明显.
- 通过结合这些外部刺激,可以调整Hf2CO2/MoS2异构的特性.
结论:
- 在外部刺激下,Hf2CO2/MoS2异构结构表现出可调节的电子特性.
- 这些可调节的异构结构对开发下一代纳米设备充满希望.
- 潜在的应用包括光子学,电子学,光电子学和神经形态计算.
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