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Updated: Jul 10, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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在高性能2Dp-FET中,通过范德瓦尔斯集成和接触间隔剂兴奋剂,实现自行对齐的顶端门结构

Tien Dat Ngo1, Tuyen Huynh1, Inyong Moon2

  • 1SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea.

Nano letters
|November 20, 2023
PubMed
概括

研究人员开发了新的2D材料p型场效应晶体管 (p-FETs),使用自我调整的顶端门堆和选择性等离子体兴奋剂. 这一突破使得高性能的p-FET和低功耗的互补金属氧化物半导体 (CMOS) 设备成为可能.

关键词:
两维半导体是二维的半导体这是一个双门的门.氧气等离子体氧气等离子体模式化使用兴奋剂的个人资料.转移的VDW顶端门.氧化的氧化.

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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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