薄V2O5薄膜通过增强等离子体原子层沉积合成,用于记忆应用
Irina V Antonova1,2, Vladimir A Seleznev1, Nadezhda A Nebogatikova1
1Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.
Physical chemistry chemical physics : PCCP
|November 21, 2023
概括
通过增强等离子体原子层沉积合成的氧化 (V2O5) 薄膜显示出有希望的记忆性切换行为. 这些V2O5记忆器的最佳性能是在3.6nm左右的薄膜厚度下观察到的.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 固态物理 固态物理
背景情况:
- 记忆器件为下一代电子产品提供了新的功能.
- 氧化 (V2O5) 由于其独特的电子特性,是用于记忆应用的有希望的材料.
研究的目的:
- 通过增强等离子体原子层沉积 (PEALD) 合成的V2O5薄膜的记忆性特性.
- 分析V2O5薄膜厚度和基板 (p-Si与Si-FG/Si上的化石墨烯) 对记忆性能的影响.
主要方法:
- PEALD合成V2O5薄膜,厚度从1.0到10.0纳米不等.
- 使用圆测量,原子力显微镜 (AFM) 和拉曼光谱法进行表征.
- 电气测量包括电容-电压 (C-V) 特性和导电性的温度依赖性.
主要成果:
- 在初始V2O5薄膜阶段观察到岛屿生长;对于薄膜>2.0nm,证实了orthorhombic V2O5阶段.
- 对V2O5薄膜 (1.0-4.2 nm) 观察到显著的C-V歇斯底里,电荷类型取决于厚度.
- 对于V2O5薄膜 (1.0-3.6 nm) 证明了高达4个数量级的ON/OFF比率的记忆式切换.
- 化石墨烯 (FG) 层会影响电状态;对于薄膜>5.0 nm,记忆性切换会减少.
结论:
- 通过PEALD合成的V2O5片表现出厚度依赖的记忆性切换.
- 在大约3.6nm的V2O5薄膜厚度下获得最佳的记忆性能和稳定性.
- FG层可以调节电气特征,这表明了定制设备性能的潜力.
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