V2O5,

Irina V Antonova1,2, Vladimir A Seleznev1, Nadezhda A Nebogatikova1

  • 1Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.

概括

通过增强等离子体原子层沉积合成的氧化 (V2O5) 薄膜显示出有希望的记忆性切换行为. 这些V2O5记忆器的最佳性能是在3.6nm左右的薄膜厚度下观察到的.

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