超低电流 10nm 旋转厅纳米振荡器
Nilamani Behera1, Avinash Kumar Chaurasiya1, Victor H González1
1Physics Department, University of Gothenburg, Gothenburg, 412 96, Sweden.
Advanced materials (Deerfield Beach, Fla.)
|November 22, 2023
概括
研究人员通过使用Al2O3种子层改进了自旋霍尔纳米振荡器 (SHNOs),使10nm设备具有超低电流 (<30μA). 这一突破对于节能的神经形态计算和大规模的旋转子阵列至关重要.
科学领域:
- 这就是Spintronics.
- 纳米技术 纳米技术
- 材料科学 材料科学 材料科学
背景情况:
- 旋转厅纳米振荡器 (SHNOs) 是神经形态计算的关键.
- 在50 nm以下的SHNOs的小型化面临着值电流缩放的挑战.
- 通过Si基板的电流分流限制了SHNO的性能.
研究的目的:
- 调查纳米收缩SHNOs中低值电流缩放的起源.
- 探索种子层的使用,以减轻当前的变流.
- 能够将SHNO小型化到真正的纳米尺寸.
主要方法:
- 在p-Si基板上制造具有不同种子层的纳米收缩SHNOs.
- 描述SHNO性能,重点关注值电流.
- 通过Si基板进行电流变流效应的分析.
主要成果:
- 通过Si基板识别了电流变流作为差缩放的主要原因.
- 证明超薄的Al2O3种子层显著提高SHNO性能.
- 在30μA以下的门电流下运行的10纳米宽的SHNOs.
- 展示了Al2O3在电绝缘和热导电方面的双重优势,用于大型阵列.
结论:
- 超薄的Al2O3种子层有效地减轻了纳米缩小的SHNO中的电流变流.
- 这使得SHNO在超低运行电流下实现了前所未有的缩小到10nm.
- 开发的SHNO为扩展基于振荡器的计算提供了节能途径,包括大型动态神经网络和2D阵列.
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