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Updated: Jul 10, 2025

U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen
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碳含量对碳化的电子结构的影响

Sergei M Butorin1, Stephen Bauters2,3, Lucia Amidani2,3

  • 1Condensed Matter Physics of Energy Materials, X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, P.O. Box 516, 751 20, Uppsala, Sweden. sergei.butorin@physics.uu.se.

Scientific reports
|November 22, 2023
PubMed
概括

这项研究揭示了碳化中碳含量的变化如何影响其电子结构和热力学特性. 计算和X射线光谱显示,在费米水平上,碳含量较高的状态中,U 5f占用率增加,密度较低.

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