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Updated: Jul 10, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
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空位缺陷对基于CoN4C2的2D设备的异构电子传输行为的影响:一项第一原则研究

Wenhao Yang1, Tong Chen1,2, Luzhen Xie1

  • 1School of Energy and Mechanical Engineering, Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang, 330013, People's Republic of China.

Nanotechnology
|November 23, 2023
PubMed
概括

单原子厚的化碳化 (CoN4C2) 单层显示出强大的异构电子传输. 的空缺增强了这种异构和负差电阻 (NDR),显示了先进电子设备的潜力.

关键词:
在 CoN4C2 单层单层中.在 NDR 效应中,NDR 效应是:不同类型的异型性异型性电子运输是一种电子运输.缺陷的空缺缺陷的缺陷

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