基于InGaP/GaAs HBT MMIC和LGA技术的BDS-3终端功率放大器的设计
Zhenbing Li1, Junjie Huang1, Jinrong Zhang1
1School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Micromachines
|November 25, 2023
概括
一个新的L频段无线电频率功率放大器 (PA) 芯片用于北斗-3导航卫星系统 (BDS-3) 终端提供了高性能. 这种高度集成的PA芯片确保了BDS-3独特的短消息功能,具有出色的增益,效率和线性.
科学领域:
- 电气工程 电气工程
- 卫星通信 卫星通信
- 半导体设备 半导体设备
背景情况:
- 北斗三号导航卫星系统 (BDS-3) 需要高性能无线电频率 (RF) 发射电路,以实现其独特的短消息功能.
- 射频功率放大器 (PA) 是决定射频发射电路整体性能的关键组件,影响传输功率,效率,线性和集成.
研究的目的:
- 为BDS-3终端设计和模拟一个高度集成的L频段PA芯片.
- 为了实现高输出功率,效率和线性,同时确保波抑制和紧的尺寸.
主要方法:
- 使用InGaP/GaAs异质连接双极晶体管 (HBT) 技术的L频段PA芯片的设计.
- 整合了温度不敏感的自适应偏差,F类波抑制,模拟预扭曲,自适应功率检测和LGA包装技术.
- 开发辅助平台,用于模拟和优化PA设计.
主要成果:
- 该PA芯片实现了高达39.4dB的线性增益和高达38.2dBm的和输出功率 (Psat).
- 增加功率效率 (PAE) 达到51.7%,高波抑制比低于-62dBc.
- 该芯片拥有6 × 4 × 1 mm3的紧尺寸.
结论:
- 设计的L频段PA芯片表现出高增益,效率和线性,性能优于类似的设计.
- 在各种场景中,PA芯片满足了BDS-3终端短消息功能的要求.
- 采用的综合设计和先进技术为卫星通信应用提供了显著的优势.
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