非循环通道对3D NAND闪存中值电压分布的影响
Donghyun Go1, Gilsang Yoon1, Jounghun Park1
1Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
Micromachines
|November 25, 2023
概括
在3D NAND闪存中研究非圆形电池揭示了电荷捕获层中的电子分布不均会显著影响值电压. 优化细胞几何学可以提高设备的可靠性.
科学领域:
- 半导体设备物理 半导体设备物理
- 材料科学 材料科学 材料科学
背景情况:
- 3D NAND闪存中的非圆形细胞几何形状在值电压 (V) 稳定性方面存在挑战.
- 了解电荷分布对于提高设备性能和可靠性至关重要.
研究的目的:
- 调查导致非圆形3D NAND闪存存储器细胞值电压不稳定的因素.
- 分析不均的被困电子密度对设备特征的影响.
主要方法:
- 技术计算机辅助设计 (TCAD) 模拟被使用.
- 分析的重点是电场变化及其对电荷捕获层 (CTL) 特性的影响.
- 研究了具有不同尖峰高度和角度的两尖尖细胞配置.
主要成果:
- 在CTL中的不均的被困电子密度,特别是较少被困电子 (LT) 区域,显著提高了电流流量.
- 超过50%的总电流可以在峰值大小达到15纳米时通过LT区域流动.
- 电荷分布与具有不同尖峰几何形状的电池中的值电压有很强的相关性.
结论:
- 该研究确定非均的电荷分布是非循环3DNAND电池值电压不稳定的关键因素.
- 研究结果表明,优化细胞几何,特别是尖峰尺寸和角度,可以提高3D NAND闪存的可靠性.
更多相关视频
08:43Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
8.1K
09:49In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
4.1K
相关概念视频
Characteristics of MOSFET
392
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
392
MOSFET: Depletion Mode
363
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
363
Non-ohmic Devices
1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
P-N junction
540
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
540
MOSFET: Enhancement Mode
346
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
346
Metal-Semiconductor Junctions
353
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
353
