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Updated: Jul 10, 2025

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
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Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Published on: April 18, 2019

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紧物理热载体降解模型在广泛的偏差范围内有效

Stanislav Tyaginov1, Erik Bury1, Alexander Grill1

  • 1Imec, Kapeldreef 75, 3001 Leuven, Belgium.

Micromachines
|November 25, 2023
PubMed
概括

我们为热载体降解 (HCD) 创建了一个紧的物理模型,可以准确地预测各种门和排水电压的设备行为. 该模型强调二次载体冲击电离,这对于在特定压力条件下理解HCD至关重要.

关键词:
运输公司运输运营商运输运输紧的物理模型.热载体降解降解热载体降解冲击电离化的影响.接口陷 接口陷二级运营商是第二级运营商.

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