探索基于GaN的电源HEMT与连贯通道的潜力
Xinghuan Chen1, Fangzhou Wang2, Zeheng Wang3
1The China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.
Micromachines
|November 25, 2023
概括
这项研究引入了一种新的化 (GaN) 高能移动性晶体管 (HEMT),具有独特的连贯通道. 这种设计显著提高了先进功率电子产品的功率传输能力.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 化 (GaN) 工业需要在高能移动性晶体管 (HEMT) 中增强功率传输.
- 现有的GaN HEMT在实现卓越的功率处理能力方面存在局限性.
研究的目的:
- 介绍一种新的增强型GaN HEMT设计.
- 为了研究一个使用连贯通道用于三维电子海的装置.
- 为了提高GaN HEMTs的功率传输能力.
主要方法:
- 使用Silvaco工具进行设备模拟.
- 对模拟模型与实验数据进行校准.
- 对设备性能指标的数值分析.
主要成果:
- 拟议的GaN HEMT显示了高启动电流超过3A/mm.
- 断裂电压保持稳健,在800V以上.
- 计算出约翰逊和巴利加的功绩数据显示了显著的绩效提升.
结论:
- 新的连贯通道设计有效地提高了GaN HEMT的性能.
- 这一进步对下一代动力电子应用具有前景.
- 拟议的设备架构适用于高功率传输要求.
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