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Updated: Aug 1, 2026

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对于5G射频应用的AlGaN/GaN HEMTs的MOCVD-和LPCVD-SiNx表面被动性的全面比较

Longge Deng1, Likun Zhou2, Hao Lu1

  • 1State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|November 25, 2023
PubMed
概括

使用LPCVD-SiNx的高温被动化通过降低欧姆接触电阻来提高AlGaN/GaN HEMT的性能. 这种方法与先进制造兼容,并提高了5G应用的功率增加效率 (PAE).

关键词:
它们是AlGaN/GaNN.在SiNx被动化过程中,SiNx/GaN 接口的接口高电子移动性晶体管 (HEMT) 的使用低压化学蒸汽沉积 (LPCVD) 是一种欧姆接触的接触是欧姆接触.

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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...