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在锡氧化物薄膜晶体管上NF₃HfO₂等离子处理门绝缘体表面的影响

Christophe Avis¹, Jin Jang¹

¹Advanced Display Research Center, Department of Information Display, Kyung Hee University, Seoul 130-701, Republic of Korea.

Materials (Basel, Switzerland)

|November 25, 2023

概括

通过提高HfO2门绝缘体质量,NF3等离子处理可以增强无形氧化TFT. 10秒的处理优化了设备的稳定性和性能,减少了缺陷和歇斯底里.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

无形锡氧化物 (a-SnOx) 薄膜晶体管 (TFT) 对电子应用具有前景.
门绝缘器特性显著影响TFT性能和稳定性.
等离子处理提供了一种修改材料接口和性能的方法.

研究的目的:

研究三化物 (NF3) 血处理对a-SnOx TFT中的HfO2门绝缘体的影响.
为了优化NF3等离子治疗时间,以改善设备特性.
了解等离子处理,接口质量和设备稳定性之间的相关性.

主要方法:

使用HfO2门绝缘体制造a-SnOx TFT.
应用NF3等离子治疗的不同持续时间 (0,10,30秒).
电气特性包括故障电压,电容,移动性,下值摆动,值电压和歇斯底里.
分析薄膜结晶度,氧气环境和状态密度 (DOS).

主要成果:

在保持电容的同时,NF3等离子治疗略微增加了HfO2分解电压.
在10秒治疗后,获得了最佳的线性运动 (~35 cm2/Vs) 和显著降低的歇斯底里 (~0 V).
经过10秒处理的TFT在高电流应力 (HCS) 下表现出卓越的稳定性.
NF3处理增强了金属-氧键,并降低了a-SnOx中的DOS,改善了HfO2 / a-SnOx接口.

结论:

10秒NF3等离子处理对a-SnOx TFTs有益,提高了门绝缘体质量和设备稳定性.
改进的接口质量和减少的缺陷密度有助于提高性能和HCS稳定性.
在高级应用中,NF3等离子处理为优化a-SnOx TFT提供了一种可行的方法.

关键词:

在NF3等离子体治疗过程中,结晶性结晶性是指结晶性.有氧化物半导体半导体薄膜晶体管是一种薄膜晶体管.锡氧化物锡氧化物

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