概括
这项研究介绍了一种没有蚀刻的化装载酸极化控制器. 它提供宽带操作和任意偏振控制,插入损失低.
科学领域:
- 光子学 是一个光子学.
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
背景情况:
- 极化控制器是光子集成电路中的关键组件.
- 现有的设计往往涉及复杂的制造工艺或有限的带宽.
- 薄膜酸 (LiNbO3) 提供了优秀的电光特性,但需要仔细的整合.
研究的目的:
- 推出一种新的,没有蚀刻的极化控制器设计.
- 为了实现光学通信波长的宽带运行.
- 为了证明对极化状态的精确控制,低功耗.
主要方法:
- 使用化 (Si3N4) 装载的薄膜LiNbO3平台.
- 用于TM/TE分割和转换的使用模式演变技术.
- 集成了两种模式进化3dB合器和两个电光相变器.
主要成果:
- 从1.45到1.65微米实现了宽带操作.
- 数字模拟预测芯片上插入损失低于1dB.
- 证明了任意输入偏振控制到一个单一的TE模式输出使用电压<10V.
结论:
- 拟议的无蚀刻设计为LiNbO3光子设备提供了简化制造途径.
- 极化控制器在宽带应用中表现出卓越的性能特性.
- 这项技术对先进的光通信系统和集成光子学具有前景.
相关概念视频
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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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