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通过薄铜膜提高Schottky屏障光探测器的外部量子效率

Jongeun Seok, Yeonghoon Jin, Kyoungsik Yu

|November 29, 2023

概括

薄铜膜提高了近红外 (NIR) 频谱中的光探测器性能. 这些基于铜的Schottky屏障光探测器 (SBPD) 显示了更好的量子效率,以更好地检测NIR光.

科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
半导体物理半导体物理

背景情况:

基于的Schottky屏障光探测器 (SBPD) 为近红外 (NIR) 光探测提供了一个具有成本效益的解决方案.
由于金属吸收和热电子排放效率不足,当前的SBPD面临量子产量的限制.

研究的目的:

调查薄铜 (Cu) 薄膜在提高基SBPD在NIR应用中的性能方面的有效性.
解决现有的SBPD中低量子产量的局限性.

主要方法:

使用薄铜薄膜制造SBPD.
光探测器性能的表征,专注于NIR区域的外部量子效率 (EQE).
对基于Cu的SBPD与其他基于金属的SBPD进行比较分析.

主要成果:

与其他金属SBPD相比,薄膜Cu SBPD显示出更高的外部量子效率 (EQE).
这种增强的性能归因于铜的低Schottky屏障高度和长的平均自由路径.
在1510nm时,最薄的Cu SBPDs在-3V偏差下实现了大约1%的EQE.

结论:

薄铜薄膜是改善基SBPD在NIR频谱中的性能的一个有希望的材料.
基于Cu的SBPD为具有成本效益和高效的NIR光检测提供了一个可行的途径.
进一步优化Cu薄膜厚度和设备架构可以带来更高的量子效率.

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