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高密度的人工突触阵列由同质的电解质门式晶体管组成

Jun Li^1,2,3, Yuxing Lei¹, Zexin Wang¹

¹School of Material Science and Engineering, Shanghai University, Jiading, Shanghai, 201800, P. R. China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

|November 29, 2023

概括

这项研究引入了一种新的侧门结构,用于在人工突触阵列中高密度集成电解质通道晶体管 (EGT). 这一进步使得高效的神经形态计算和高精度的图像处理成为可能.

科学领域:

材料科学材料科学材料科学
神经科学是一个神经科学.
电气工程电气工程

背景情况:

使用电解质通道晶体管 (EGT) 的人工突触阵列显示出神经形态计算的前景.
整合EGT是具有挑战性的,因为聚合物电解质和光刻法之间的冲突.

研究的目的:

开发一种使用侧门结构的高密度EGT集成方案.
通过一种新的电解质框架来增强人工突触阵列的性能.

主要方法:

实施了EGT集成的侧门结构.
在2.5 × 2.5 cm2的玻璃基板上制造了一个100 × 100 EGT阵列.
开发了一种基于电解质的多孔热利性伊米达酸框架-67.

主要成果:

实现了高达1600个设备的单位密度cm−2.2.
电解质框架显示的离子导电率高达2.87 × 10−3 S cm−1.1.
人工突触阵列在图像处理任务中表现出高性能和同质性.

结论:

侧门结构促进了高密度EGT集成,克服了以前的局限性.
开发的电解质框架显著提高了阵列性能.
集成阵列显示了实用应用的可行性,例如以92.80%的准确性识别手写.

关键词:

摄影-石版印刷技术的使用.人工突触阵列是一个人造突触阵列.电解质门通晶体管的电解质门通晶体管.侧门 - 侧门 - 侧门金属有机框架的框架.

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