用于离子电池的层结构多过渡金属氧化物阴极材料,具有长周期寿命和优越速率能力
Shuai-Shuai Wang1, Zhao-Meng Liu1, Xuan-Wen Gao1
1Institute for Energy Electrochemistry and Urban Mines Metallurgy, School of Metallurgy, Northeastern University, Liaoning 110819, China.
ACS applied materials & interfaces
|November 29, 2023
概括
一种基于的新型阴极材料KMCFAO提高了离子电池的性能. 这种材料展示了优越的容量保留和能量密度,解决了当前电池技术的关键局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 储能 储能 储能 储能 储能 储能
背景情况:
- 基于的层结构过渡金属氧化物是离子电池 (KIB) 的有希望的阴极材料,因为它们的成本低,电压高.
- 目前的KIB阴极材料面临着能量密度和循环寿命的挑战,原因是离子间隙/脱间隙过程中的结构不稳定性.
- 优化轨道和电子结构对于保持结构完整性和增强K+扩散性至关重要.
研究的目的:
- 为了合成和评估一种新的多过渡金属氧化物,P3型K0.5Mn0.85Co0.05Fe0.05Al0.05O2 (KMCFAO),作为KIBs的阴极材料.
- 调查KMCFAO对改善离子安置和稳定的结构益处.
- 评估KIB中的KMCFAO的电化学性能,包括容量保留和能量密度.
主要方法:
- 合成P3类型的K0.5Mn0.85Co0.05Fe0.05Al0.05O2 (KMCFAO) 多过渡金属氧化物.
- 电化学测试KMCFAO作为离子电池中的阴极材料.
- 制造和测试KMCFAO//硬碳全电池,以评估实际的能量密度和长期循环稳定性.
主要成果:
- KMCFAO的层间距更大,可以更好地适应K+,并防止不可逆转的结构转变.
- 该材料在300个循环后在500 mA g-1.0 时实现了96.8%的优越容量保留.
- KMCFAO//硬碳全电池在100 mA g-1下显示了113.8 Wh kg-1的能量密度,在500个周期内保持了72.6%的容量.
结论:
- 合成的KMCFAO材料有效地解决了基KIB阴极中的结构不稳定性问题.
- 作为先进离子电池的高性能阴极材料,KMCFAO具有显著的潜力.
- 改进的循环稳定性和能量密度突出显示了多过渡金属氧化物对下一代能源存储解决方案的承诺.
相关概念视频
Alkali Metals
19.3K
Group 1 elements are soft and shiny metallic solids. They are malleable, ductile, and good conductors of heat and electricity. The melting points of the alkali metals are unusually low for metals and decrease going down the group, while the density increases going down the group with the exception of potassium (Table 1).
Table 1: Properties of the alkali metals
Table 1: Properties of the alkali metals
19.3K
Electrolysis
26.5K
In a galvanic cell, the electrical work is done by a redox system on its surroundings as electrons produced by the spontaneous redox reactions are transferred through an external circuit. Alternatively, an external circuit does work on a redox system by imposing a voltage sufficient to drive an otherwise nonspontaneous reaction in a process known as electrolysis. For instance, recharging a battery involves the use of an external power source to drive the spontaneous (discharge) cell reaction in...
26.5K
Batteries and Fuel Cells
27.5K
A battery is a galvanic cell that is used as a source of electrical power for specific applications. Modern batteries exist in a multitude of forms to accommodate various applications, from tiny button batteries such as those that power wristwatches to the very large batteries used to supply backup energy to municipal power grids. Some batteries are designed for single-use applications and cannot be recharged (primary cells), while others are based on conveniently reversible cell reactions that...
27.5K
Properties of Transition Metals
26.0K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
26.0K
Ionic Bonding and Electron Transfer
41.6K
Ions are atoms or molecules bearing an electrical charge. A cation (a positive ion) forms when a neutral atom loses one or more electrons from its valence shell, and an anion (a negative ion) forms when a neutral atom gains one or more electrons in its valence shell. Compounds composed of ions are called ionic compounds (or salts), and their constituent ions are held together by ionic bonds: electrostatic forces of attraction between oppositely charged cations and anions.
41.6K
MOS Capacitor
798
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
798


