化单层与土金属合的第一原则研究
Duy Khanh Nguyen1,2, Chu Viet Ha3, Le T Hong Gam3
1Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University Ho Chi Minh City Vietnam.
RSC advances
|November 29, 2023
概括
合化 (InN) 单层与土金属 (AEMs) 产生磁性半导体. 这项研究表明,AEM兴奋剂是开发新型2D材料用于自旋电子学的有希望的途径.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算化学计算化学
背景情况:
- 在调整二维材料的性质方面,元素兴奋剂至关重要.
- 化 (InN) 单层是他们潜在应用的兴趣对象.
研究的目的:
- 研究土金属 (AEM) 兴奋剂对InN单层的影响.
- 探索由此产生的结构,电子和磁性特性修改.
主要方法:
- 基于密度函数理论 (DFT) 的第一原则计算.
- 分析结构稳定性,电子带结构和磁矩.
主要成果:
- 无毒的InN单层是稳定的,间接的间隙半导体.
- 印空隙会诱导一个磁性半导体状态,其磁矩为3.00μB.
- AEM兴奋剂 (Mg,Ca) 导致能量上有利的半金属行为.
- 半金属性源于N-2p轨道变化,其磁矩为1.00μB.
结论:
- AEM 兴奋剂有效地改变了 InN 单层,诱导了可取的磁性特性.
- 用AEMs取代In提供了一个可行的策略,用于创建新的2D自旋电子材料.
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