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Updated: Jul 9, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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在添加β-Ga2O3中的点缺陷:混合DFT计算

Asiyeh Shokri1, Yevgen Melikhov2, Yevgen Syryanyy1,3

  • 1Institute of Plasma Physics and Laser Microfusion, ul. Hery 23, 01-497 Warsaw, Poland.

ACS omega
|November 29, 2023
PubMed
概括

在β-氧化物 (β-Ga2O3) 中兴奋剂显示出稳定的间歇性缺陷. 这些缺陷,特别是间歇点上的Si,表现出自发的稳定性,并诱导材料中的磁性.

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相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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