多域效应对铁电场效应晶体管有效载体流动性的影响
FenNing Liu1, YueYuan Zhang1, Yue Peng1
1Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, People's Republic of China.
Nanotechnology
|November 30, 2023
概括
该研究揭示了氧化 (HZO) 铁电场效应晶体管 (FeFET) 的多域效应如何影响通道移动性. 写脉冲通过增加散射来降低移动性,而删除脉冲通过减少散射来增强移动性,这对于神经形态计算至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 固态电子 固态电子
- 纳米技术纳米技术
背景情况:
- 基于氧化 (HfO2) 的铁电场效应晶体管 (FeFET) 显示出由于多域性质的多层记忆和类似大脑的计算的前景.
- 多域效应对基于HfO2的FeFET有效通道载体流动性 (μ_channel) 的影响仍未得到充分研究.
- 有效的通道移动性对于读出电流和外围电路精度至关重要.
研究的目的:
- 调查多域切换对基于HfZrO2的FeFET有效通道载体移动性的影响.
- 了解写入和删除操作期间移动性调制的基本机制.
- 探索多层极化状态在低功耗神经形态计算应用中的潜力.
主要方法:
- 使用HfZrO2铁电门介电器制造FeFET.
- 使用带有线性梯度变化的写入/删除脉冲来研究移动性变化.
- 对载体散射和密度变化的分析.
- 数字模拟来验证多层极化状态的调制效应.
主要成果:
- 写出脉冲 (向下极化) 降低μ_通道由于被困的正电荷 (例如,氧空缺) 的扩散和载体密度的增加.
- 擦除脉冲 (向上的极化) 增加了μ_通道,这是由于从脱落的电荷中减少的散射和载体密度的减少.
- 数字模拟证实了多层极化状态有效调节μ_channel.
结论:
- 多域效应显著影响基于HfZrO2的FeFET中有效的通道载体流动性.
- 了解和控制这些移动性调制是优化FeFET在多层记忆和神经形态计算中的性能的关键.
- 这项工作为开发用于先进计算范式的低功耗HfO2基FeFET提供了洞察力.
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