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Updated: Jul 9, 2025

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate
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在氧气亚静电学氧化物薄膜中的两极表面导电

Anastasia Soultati1, Konstantinos Aidinis2,3, Alexander Chroneos4,5

  • 1Institute of Nanoscience and Nanotechnology, NCSR "Demokritos", POB 60228, 153 10, Agia Paraskevi, Attiki, Greece.

Scientific reports
|November 30, 2023
PubMed
概括

氧化 (MoOx) 薄膜由于氧气空缺而表现出温度依赖的双极导电. 这种行为受到电子结构和原子排序的影响,是可逆的,并提供了对半导体特性的见解.

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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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