在异构结构中的辅助压电效应
Ming-Min Yang1,2,3, Tian-Yuan Zhu4,5, Arne Benjamin Renz6
1Department of Physics, The University of Warwick, Coventry, UK. mingminyang@hfnl.cn.
Nature materials
|November 30, 2023
概括
接口对称性工程使辅助性压电效应成为可能,导致所有方向同时膨胀或收缩. 这种新型的机电联接在半导体设备中具有广泛的应用.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 接口对称性破坏驱动各种物理现象,如自旋电荷转换和光伏效应.
- 接口不对称性可以在异构结构中诱导压电,包括带有中心对称半导体的半导体,使电机械合成为可能.
- 压电效应对于执行器,传感器和过器至关重要.
研究的目的:
- 设计接口对称性,以实现新的压电现象.
- 在压电异构结构中证明负波桑比率的电学模拟.
- 探索这种效应在高级半导体应用中的潜力.
主要方法:
- 半导体异构结构中接口对称性的有针对性的工程.
- 纵向 (d33) 和横向 (d31,d32) 压电系数的表征.
- 通过平面内对称性异构来调整横系数.
主要成果:
- 实现了类似于负波桑比率的压电现象,称为辅助性压电效应.
- 在电刺激下,由于压电系数的一致迹象,在所有方向上观察到同时的收缩或膨胀.
- 通过平面内对称性证明横系数的可调性.
结论:
- 辅助性压电效应为机电合提供了一个新的范式.
- 这种效应可以在具有实质系数的各种材料系统中实现.
- 潜在的应用包括全半导体执行器,传感器和过器.
相关概念视频
01:27Biasing of Metal-Semiconductor Junctions
260
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
260
01:16Biasing of P-N Junction
548
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
548