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Updated: Jul 9, 2025

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在六角形SiC单层中的拓线缺陷

Wallace P Morais1, Guilherme J Inacio1, Rodrigo G Amorim2

  • 1Departamento de Física, Universidade Federal do Espírito Santo, Vitória-ES, 29075-910, Brazil.

Physical chemistry chemical physics : PCCP
|December 1, 2023
PubMed
概括

2D碳化 (SiC) 的缺陷工程揭示了稳定线缺陷,改变了电子特性并增强了吸附,为新应用打开了大门.

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