在共享FPGA上的软核心CPU的指令级功率侧通道泄漏评估
Ognjen Glamočanin1, Shashwat Shrivastava1, Jinwei Yao1
1School of Computer and Communication Sciences, EPFL, Route Cantonale, Lausanne, 1015 Vaud Switzerland.
概括
研究人员分析了远程,多租户FPGA环境中的CPU指令电源泄漏. 他们成功地以高达86.46%的准确度识别了指令操作代码,表明即使没有物理访问,敏感代码也存在风险.
科学领域:
- 计算机安全 计算机安全
- 硬件安全 硬件安全
- 侧通道分析侧通道分析
背景情况:
- 侧通道拆卸攻击通常需要物理访问和专用设备来从电源跟踪中恢复CPU指令.
- 现有的远程电源侧通道攻击通常需要大量的痕迹或针对大型电路,如机器学习加速器.
- 在具有软核CPU的多租户FPGA环境中,指令级电源泄漏的安全影响仍然未被充分探索.
研究的目的:
- 在一个远程,多租户的FPGA场景中分析CPU指令级的电源侧通道泄漏,缺乏物理访问和昂贵的设备.
- 评估使用芯片上的电压传感器和机器学习从软核CPU中恢复指令操作代码的可行性.
- 调查各种参数对分类准确性的影响,并评估专有代码的安全风险.
主要方法:
- 在FPGA上对受害者RISC-V软核CPU进行分析,并分析芯片上的电压波动传感器数据.
- 使用经典机器学习和深度学习方法实现指令操作代码分类器.
- 探索痕迹平均,分析模板,FPGA配置和不同FPGA家族对分类准确性的影响.
主要成果:
- 在最坏的情况下,指令操作代码分类的平均准确率高达86.46%,尽管泄漏和传感器功能有限.
- 确定执行的指令类型并不是主要的分类瓶;对于深度学习模型来说,区分相同类型的指令更具挑战性.
- 在具有更高软核CPU频率的云规模FPGA中,指令级泄漏显著减少.
结论:
- 即使是像FPGA上的软核CPU这样的小电路,也会通过芯片上的电源侧通道泄露可利用的信息.
- 在多租户FPGA环境中,远程拆解攻击是可行的,对专有代码和数据构成威胁.
- 在这种情况下,针对拆解攻击的缓解技术对于保护敏感信息至关重要.
相关概念视频
Semiconductors
708
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
708
Biasing of FET
284
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
284
MOSFET: Enhancement Mode
346
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
346
Non-ohmic Devices
1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
Clamper Circuit
439
A clamper circuit, also known as a DC restorer, represents a specialized variant of the rectifier circuit, notable for its method of taking the output across the diode rather than the capacitor. This configuration lends to several distinctive applications, particularly in handling square wave inputs.
Within this circuit, the diode's orientation prompts the capacitor to charge up to the level of the most negative peak of the input signal. Upon reaching this state, the diode ceases to...
Within this circuit, the diode's orientation prompts the capacitor to charge up to the level of the most negative peak of the input signal. Upon reaching this state, the diode ceases to...
439
MOSFET
484
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
484


